Chemistry and Materials Science Thesis Defense: Development and Optimization of Electric-Double-Layer Gated Transistors Based on Low-Dimensional Materials: Gate-All-Around InAs Nanowire Arrays and Graphene Channels
Tuesday, December 10, 2024 2:00–3:00 PM
- DescriptionChemistry and Materials Science Thesis DefenseDevelopment and Optimization of Electric-Double-Layer Gated Transistors Based on Low-Dimensional Materials: Gate-All-Around InAs Nanowire Arrays and Graphene Channels
- Websitehttps://www.rit.edu/events/chemistry-and-materials-science-thesis-defense-development-and-optimization-electric-double-layer